Product Level Reliability Challenges for 65nm Technologies
نویسندگان
چکیده
We present a comprehensive review of product level reliability challenges for the 65nm technology node. The major reliability degradation mechanisms are analyzed for CMOS technologies. Historical data will show that hot carrier degradation has lost on importance and that negative bias temperature instability (NBTI) is the leading reliability concern for the 65nm technology node. Additionally, dielectric breakdown as well as gate leakage currents pose an important limitation to the maximum applicable voltage across the gate oxide. Product standby currents and regulator design are highly influenced by transistor reliability. We will present product reliability data ensuring sufficient product level reliability as well as their correlation attempts to transistor level data.
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NBTI Product Level Reliability Challenges
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